Semiconductor packages and methods of manufacturing the same

Abstract

A semiconductor package, that includes: a first semiconductor chip including first pads; a second semiconductor chip including second pads on a first surface facing the first semiconductor chip and in contact with the first pads, and including through-electrodes electrically connected to the second pads and extending to a second surface, opposite to the first surface; a first dielectric layer that covers the rear surface of the second semiconductor chip and a portion of each of side surfaces of the through-electrodes thereof; a second dielectric layer that surrounds a side surface of the second semiconductor chip; and bump structures on a planar surface defined by the first dielectric layer and the second dielectric layer, and electrically connected to the through-electrodes, The first dielectric layer may include an inorganic compound, and the second dielectric layer may include an organic-inorganic composite material having a lower coefficient of thermal expansion than the inorganic compound.