The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Mar. 09, 2023
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Ang-Sheng Lin, Hsinchu City, TW;

Yen-Liang Yeh, Hsinchu City, TW;

Hao-Wei Huang, Hsinchu City, TW;

Assignee:

MEDIATEK INC., Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/20 (2025.01); H10W 20/40 (2026.01); H10W 42/20 (2026.01); H10W 44/20 (2026.01);
U.S. Cl.
CPC ...
H10W 20/497 (2026.01); H10D 1/20 (2025.01); H10W 44/20 (2026.01); H10W 44/241 (2026.01);
Abstract

A semiconductor device includes a metal layer, a ground plane formed on the metal layer, a first inductor formed on the metal layer, and a first isolation region formed on the metal layer and arranged to separate the first inductor from the ground plane. The first isolation region includes a first main area surrounding the first inductor, and at least one first slot extended from the first main area.


Find Patent Forward Citations

Quick Actions:

Lin, Ang-Sheng. (2026). Semiconductor device using one or more slots added to isolation region surrounding inductor for isolation improvement (U.S. Patent No. 12796454). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796454

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