The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Jun. 18, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
The Regents of the University of California, Oakland, CA (US);
Jane P. Chang, Los Angeles, CA (US);
Owen Watkins, Los Angeles, CA (US);
Harsono S. Simka, Saratoga, CA (US);
Ryan Sheil, Los Angeles, CA (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
The Regents Of The University Of California, Oakland, CA (US);
Abstract
A method of manufacturing an interconnect in a metal layer in a back-end-of-line of a semiconductor device includes Nplasma passivation, through an opening a hard mask, of a ruthenium layer on a substrate. The Nplasma passivation forms a ruthenium nitride layer on the ruthenium layer. The ruthenium nitride layer includes a first portion aligned with the opening and a second portion underneath the hard mask. The method also includes Hplasma reduction of the ruthenium nitride layer after the Nplasma passivation. The Hplasma reduction removes the first portion of the ruthenium nitride layer. The method also includes Oplasma etching the ruthenium layer after the Hplasma reduction. The method also includes repeatedly performing the Nplasma passivation, the Hplasma reduction, and the Oplasma etching to remove the ruthenium layer down to the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile