Etching silicon-containing material and silicon-and-germanium-containing material

Abstract

Exemplary semiconductor processing methods may include providing a halogen-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include alternating layers of silicon-containing material and silicon-and-germanium-containing material. The methods may include forming plasma effluents of the halogen-containing precursor. The methods may include contacting the alternating layers of silicon-containing material and silicon-and-germanium-containing material with the plasma effluents of the halogen-containing precursor. The contacting may etch a feature into the alternating layers of silicon-containing material and silicon-and-germanium-containing material. The contacting may be performed at a chamber operating temperature of less than or about 20° C.