The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Jan. 12, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yifeng Zhou, Fremont, CA (US);

Zhuangfei Chen, Fremont, CA (US);

Qian Fu, Pleasanton, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/24 (2026.01); H05K 3/06 (2006.01); H10P 50/00 (2026.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
H10P 50/242 (2026.01); H05K 3/064 (2013.01); H10P 50/73 (2026.01); H10P 76/2041 (2026.01);
Abstract

Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may include a photoresist material overlying a silicon-containing material. The photoresist material may define an aperture. The processing region may be at least partially defined above a substrate support on which the substrate is seated. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a material on the photoresist material. The methods may include providing an etchant precursor to the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching a portion of the photoresist material. The etching may decrease a local critical dimension uniformity of the aperture of the photoresist material.


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Zhou, Yifeng. (2026). Photolithography enhancement techniques (U.S. Patent No. 12796358). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796358

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