The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Feb. 22, 2024
International Business Machines Corporation, Armonk, NY (US);
Pouya Hashemi, Purchase, NY (US);
Jonathan Zanhong Sun, Shrub Oak, NY (US);
Daniel Worledge, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A SOT MRAM structure having a perpendicular magnetic free layer magnetization is provided The structure includes a spin conductor charge insulator layer having a horizontal portion and a vertical portion, and a spin conductor layer contacting the horizontal portion of the spin conductor charge insulator layer, and a first sidewall of the vertical portion of the spin conductor charge insulator layer. The structure further includes a MTJ structure having a magnetic free layer in direct physical contact with the spin conductor layer, a MTJ cap, a MRAM electrode-containing hard mask, and an I-shaped SOT channel located on a second sidewall of the vertical portion of the spin conductor charge insulator layer. The structure further includes a dielectric pillar located adjacent to, and in direct contact with, the I-shaped SOT channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile