The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Dec. 08, 2022
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Sachiko Kawakami, Atsugi, JP;
Nobuharu Ohsawa, Zama, JP;
Yasumasa Yamane, Atsugi, JP;
Tsunenori Suzuki, Yokohama, JP;
Tomoya Aoyama, Atsugi, JP;
Naoaki Hashimoto, Sagamihara, JP;
Kyoko Takeda, Atsugi, JP;
Yui Yoshiyasu, Atsugi, JP;
Masatoshi Takabatake, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
To inhibit an increase in voltage of an organic semiconductor device manufactured by a method including a step of forming an aluminum oxide film over and in contact with an organic semiconductor layer. An organic semiconductor device including a first electrode, a second electrode, an organic semiconductor layer, and a buffer layer is provided. The organic semiconductor layer is positioned between the first electrode and the second electrode. The buffer layer is positioned between the organic semiconductor layer and the second electrode. A side surface of the organic semiconductor layer and a side surface of the buffer layer are substantially aligned.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile