The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Jun. 16, 2022
Optical detection device, manufacturing method of optical detection device, and electronic apparatus
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Masaki Haneda, Kanagawa, JP;
Kengo Kotoo, Kanagawa, JP;
Yoshiki Shirasu, Kanagawa, JP;
Kazuki Shimomura, Kanagawa, JP;
Nobutoshi Fujii, Kanagawa, JP;
Takaaki Hirano, Kanagawa, JP;
Yosuke Fujii, Kanagawa, JP;
Takashi Oinoue, Tokyo, JP;
Suguru Saito, Kanagawa, JP;
Toshiyuki Ishimaru, Kanagawa, JP;
Keiji Ohshima, Tokyo, JP;
Shinichi Imai, Kanagawa, JP;
Takuya Kurotori, Kanagawa, JP;
Tomohiro Sugiyama, Kanagawa, JP;
Ikue Mitsuhashi, Kanagawa, JP;
Kenichi Tokuoka, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
An optical detection device including a through electrode is provided. The optical detection device includes a first semiconductor layer having a photoelectric conversion region, a first surface, and a second surface that is a light entrance surface, a second semiconductor layer with a third surface and a fourth surface, a second wiring layer overlapped with the third surface, a third wiring layer overlapped with the fourth surface, a first wiring layer with one surface overlapped with the first surface and another surface overlapped with one of the second wiring layer and the third wiring layer, a first conductor that has a first width, includes a first material, and penetrates the second semiconductor layer in a thickness direction, and a second conductor that has a second width smaller than the first width, includes a second material different from the first material, and penetrates the second semiconductor layer in the thickness direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile