Solid-state imaging device and method for manufacturing the same, and electronic apparatus

Abstract

A transfer speed (pixel driving speed) at which a signal charge photoelectrically converted by a photoelectric conversion unit is transferred to a charge accumulation region is improved. A solid-state imaging device includes: a semiconductor layer having an active region defined by an isolation region on a first surface side; a charge accumulation region in the active region; a photoelectric conversion unit in the semiconductor layer and separated from the charge accumulation region in a depth direction; and a transfer transistor with a gate electrode in an isolation region that transfers a signal charge from the photoelectric conversion unit to the charge accumulation region. The isolation region includes an isolation insulating film on the first surface side of the semiconductor layer, and the gate electrode includes a first portion adjacent to the active region with a gate insulating film interposed therebetween and a second portion adjacent to the isolation insulating film.