The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

May. 09, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jisoo Park, Suwon-si, KR;

Jung Han Lee, Suwon-si, KR;

Kwanyoung Chun, Suwon-si, KR;

Kwangmuk Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 62/10 (2025.01); H10D 88/00 (2026.01); H10W 20/41 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/851 (2025.01); H10D 62/121 (2025.01); H10D 88/00 (2025.01); H10W 20/427 (2026.01); H10D 84/038 (2025.01);
Abstract

Disclosed is a three-dimensional semiconductor device comprising a substrate including first and second regions, a first active section on the first region and including a first lower channel pattern and a first lower source/drain pattern, a second active section on the first active section and including a first upper channel pattern and a first upper source/drain pattern, a third active section on the second region and including a second lower channel pattern and a second lower source/drain pattern, a fourth active section on the third active section and including a second upper channel pattern and a second upper source/drain pattern, and a gate electrode on the first and second lower channel patterns and the first and second upper channel patterns. A first width in a first direction of the first lower channel pattern is greater than a second width in the first direction of the second lower channel pattern.


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Park, Jisoo. (2026). Three-dimensional semiconductor device (U.S. Patent No. 12796073). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12796073

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