The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Mar. 21, 2022
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
Peter Burke, Portland, OR (US);
Gary Horst Loechelt, Tempe, AZ (US);
Balaji Padmanabhan, Chandler, AZ (US);
Emily M. Linehan, Gilbert, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A method includes defining a plurality of trenches of a first type that extend in a longitudinal direction in a semiconductor substrate, and defining a trench of a second type extending in a lateral direction and intersecting the plurality of trenches of the first type. The trench of the second type is in fluid communication with each of the intersected plurality of trenches of the first type. The method further includes disposing a shield poly layer in the plurality of trenches of the first type and the trench of the second type, disposing an inter-poly dielectric layer and a gate poly layer above the shield poly layer in the plurality of trenches of the first type and the trench of the second type, and forming an electrical contact to the shield poly layer through an opening in the inter-poly dielectric layer and the gate poly layer disposed in the trench of the second type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile