The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Mar. 17, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Kohei Nishiguchi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes forming a first insulating film including a first opening; forming, on the first insulating film, a first resist including a second opening larger than the first opening; forming a gate electrode in the first opening, in the second opening, above the second opening, and on the first resist; forming a second resist on the gate electrode, the second resist covering at least a region above the second opening in the vertical direction, the second resist being wider than the second opening; etching the gate electrode and up to the middle of the first resist using the second resist as a mask; removing the first resist and the second resist; and forming a second insulating film covering an exposed portion of the gate electrode and an exposed portion of the first insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile