Nanowire, fabrication method of array substrate having activation region and growth region with different widths of guide trenchs, array substrate and electronic device

Abstract

The present disclosure provides a nanowire, a fabrication method of an array substrate, an array substrate and an electronic device, belongs to the field of semiconductor technology, and can solve the problem of large area of an active region. The fabrication method of the nanowire includes: forming an insulating layer on a first surface of the substrate; forming a trench layer having a guide trench on a surface of the insulating layer away from the substrate, wherein a width of the guide trench is 0.8 to 1.2 times of a diameter of an induction particle having a specified size; forming the induction particle in the guide trench; forming a precipitation layer on a surface of the trench layer away from the substrate; and forming the nanowire by processing the precipitation layer to separate specified atoms out in the precipitation layer along the guide trench under induction of the induction particle.