The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Dec. 15, 2023
Silicon-magic Semiconductor Technology (Hangzhou) Co., Ltd., Hangzhou City, CN;
Jian Liu, Torrance, CA (US);
Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
Abstract
A trench MOSFET includes: a substrate having a first doping type; an epitaxial layer having the first doping type, located on the substrate; gate trenches and a first conductive channel; gate conductors, each located in one of the gate trenches and isolated from the epitaxial layer via a gate dielectric layer; an epitaxial depletion region having a second doping type, located in the epitaxial layer at a bottom of the first conductive channel; body regions having the second doping type, located on two sides of each gate trench and adjacent to a side wall of the first conductive channel; source regions having the first doping type, each located in each of the body regions; a source electrode, contacting the epitaxial depletion region via the first conductive channel; and a drain electrode, contacting the substrate on a surface of the substrate away from the epitaxial layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile