The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

Dec. 05, 2023
Applicants:

Hyundai Motor Company, Seoul, KR;

Kia Corporation, Seoul, KR;

Inventors:

Dae Hwan Chun, Suwon-si, KR;

Junghee Park, Suwon-si, KR;

Jungyeop Hong, Seoul, KR;

Taehyun Kim, Suwon-si, KR;

Youngkyun Jung, Seoul, KR;

Nackyong Joo, Suwon-si, KR;

Assignees:

HYUNDAI MOTOR COMPANY, Seoul, KR;

KIA CORPORATION, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/80 (2025.01); H10D 30/47 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 99/00 (2025.01); H10W 74/10 (2026.01);
U.S. Cl.
CPC ...
H10D 30/4755 (2025.01); H10D 62/80 (2025.01); H10D 64/01 (2025.01); H10D 64/513 (2025.01); H10D 99/00 (2025.01); H10W 74/137 (2026.01);
Abstract

Provided are a semiconductor device and a method of manufacturing the same, the semiconductor device including a substrate, a buffer layer on the substrate, an n− type epitaxial layer on the buffer layer, a protective layer on the n− type epitaxial layer, a p type layer disposed in a trench structure on the protective layer, and penetrating the protective layer and within the n− type epitaxial layer, a gate insulating layer on the p type layer, and a gate electrode on the gate insulating layer.


Find Patent Forward Citations

Quick Actions:

Chun, Dae. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12795980). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795980

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