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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12795976 B1

PDFFull Text
Date of Patent:
Nov. 10, 2026

Filed:

May. 24, 2024

Semiconductor device including an intermediate electrode and compound member

Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Mariko Shimizu, Setagaya, JP;

Yosuke Kajiwara, Yokohama, JP;

Daimotsu Kato, Kawasaki, JP;

Masahiko Kuraguchi, Yokohama, JP;

Miyoko Shimada, Yokohama, JP;

Hiroshi Ono, Setagaya, JP;

Aya Shindome, Yokohama, JP;

Ikuo Fujiwara, Yokohama, JP;

Kento Minamikawa, Yokohama, JP;

Peitsen Wu, Kawasaki, JP;

Assignees:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

William B Partridge

Assistant Examiner:

Felix B Andrews

Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/411 (2025.01);
Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a compound member. The third electrode includes a first electrode portion. The first semiconductor layer includes AlGaN (0≤x1<1). The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The second semiconductor layer includes AlGaN (0<x2<1, x1<x2). The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. The compound member includes AlGaN (0<z1≤1, x2<z1). The compound member includes a first region, a second region, and a third region.

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Shimizu, Mariko. (2026). Semiconductor device including an intermediate electrode and compound member (U.S. Patent No. 12795976). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795976

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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