The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Oct. 16, 2023
Infineon Technologies Ag, Neubiberg, DE;
Andreas Hoffmann, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A field-effect transistor (FET) is described. The FET has a dielectric structure which includes a gate dielectric and a shielding dielectric. The shielding dielectric is thicker than the gate dielectric and adjoins or is spaced apart from the gate dielectric along a first lateral direction. A channel region of a first conductivity type adjoins a lower side of the gate dielectric. An auxiliary region of a second conductivity type adjoins the lower side of the gate dielectric and adjoins the channel region along a second lateral direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile