The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Feb. 15, 2024
Mitsubishi Electric Corporation, Tokyo, JP;
Shinya Soneda, Tokyo, JP;
Koichi Nishi, Tokyo, JP;
Kazuya Konishi, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An RC-IGBT includes a semiconductor substrate having a cell region, a wiring region, and a termination region. The semiconductor substrate includes a diffusion layer of a second conductivity type provided on a first main surface side of a drift layer in an IGBT region, a diode region, the wiring region, and the termination region. The diffusion layer includes a base layer in the IGBT region, an anode layer in the diode region, a wiring well layer in the wiring region, and a termination well layer in the termination region. A depth of the base layer is less than depths of a plurality of trench gates, and is equal to or more than depths of the anode layer, the wiring well layer, and the termination well layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile