The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

May. 19, 2023
Applicant:

Mediatek Singapore Pte. Ltd., Singapore, SG;

Inventors:

Chang Liang, Singapore, SG;

Zhigang Duan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H10W 20/40 (2026.01);
U.S. Cl.
CPC ...
H10D 1/696 (2025.01); H10W 20/496 (2026.01);
Abstract

A semiconductor structure includes a first semiconductor substrate, a plurality of first capacitor structures, a first dielectric layer, a second semiconductor substrate, a plurality of second capacitor structures, and a plurality of conductive pillars. The first capacitor structures are disposed in the first semiconductor substrate and arranged side-by-side. The first dielectric layer covers the first capacitor structures. The second semiconductor substrate is disposed over the first dielectric layer. The second capacitor structures are disposed in the second semiconductor substrate and arranged side-by-side. The conductive pillars extend in the first dielectric layer and electrically couple the first capacitor structures to the second capacitor structures.


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Liang, Chang. (2026). Semiconductor structure (U.S. Patent No. 12795963). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795963

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