Memory device

Abstract

A memory device includes: first conductive lines extending in a first horizontal direction on a substrate; second conductive lines extending on the first conductive lines in a second horizontal direction; third conductive lines extending on the second conductive lines in the first horizontal direction; first memory cells provided at portions where the first conductive lines cross the second conductive lines; second memory cells provided at portions where the second conductive lines cross the third conductive lines; first dummy patterns horizontally spaced apart from the first memory cells and the second memory cells; and second dummy patterns horizontally spaced apart from the first memory cells and the second memory cells, the second dummy patterns facing the first dummy patterns, respectively, in the second horizontal direction. The plurality of first dummy patterns and the plurality of second dummy patterns are on different vertical levels from each other.