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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12795947 B1

PDFFull Text
Date of Patent:
Nov. 10, 2026

Filed:

Nov. 10, 2021

Chalcogenide material, device and memory device including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hajun Sung, Hwaseong-si, KR;

Bonwon Koo, Suwon-si, KR;

Segab Kwon, Seoul, KR;

Yongyoung Park, Hwaseong-si, KR;

Dongho Ahn, Hwaseong-si, KR;

Kiyeon Yang, Seoul, KR;

Wooyoung Yang, Suwon-si, KR;

Changseung Lee, Yongin-si, KR;

Minwoo Choi, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

William B Partridge

Assistant Examiner:

Linda J. Fleck

Int. Cl.
CPC ...
H10B 63/00 (2023.01); C01B 19/00 (2006.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); C01B 19/007 (2013.01); H10B 61/10 (2023.02); C01P 2002/50 (2013.01); C01P 2006/40 (2013.01);
Abstract

Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.

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Quick Actions:

Sung, Hajun. (2026). Chalcogenide material, device and memory device including the same (U.S. Patent No. 12795947). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12795947

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