The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Feb. 10, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A three-dimensional ferroelectric random access memory (3D FeRAM) device includes: a gate electrode extending in a vertical direction on a substrate; a ferroelectric pattern and a gate insulation pattern stacked on the gate electrode in a horizontal direction to surround the gate electrode; first and second channels spaced apart from each other in the horizontal direction on an outer sidewall of the gate insulation pattern; first source/drain pattern structures spaced apart from each other in the vertical direction on an outer sidewall of the first channel; and second source/drain pattern structures spaced apart from each other in the vertical direction on an outer sidewall of the second channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile