Vertical non-volatile memory device including contact gate stack and contact electrode

Abstract

A vertical non-volatile memory device includes, a substrate, a contact gate stack structure including a plurality of gate lines stacked in a vertical direction on the substrate, the vertical direction being perpendicular to a surface of the substrate, a plurality of insulating layers between the gate lines, a plurality of separation insulating layers in contact with a protruding end of each of the plurality of gate lines, respectively, in a horizontal direction at both sides of a contact hole, wherein the contact hole extends in the vertical direction in the contact gate stack structure so that the protruding ends of the plurality of gate lines protrude from an inner wall of the contact hole, the horizontal direction being horizontal to the surface of the substrate, and a contact electrode at the contact hole and electrically connected to an uppermost gate line among the plurality of gate lines.