The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Jun. 17, 2024
Kioxia Corporation, Tokyo, JP;
Mitsuhiro Noguchi, Yokohama Kanagawa, JP;
Masayuki Akou, Yokohama Kanagawa, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A switch element configured to apply a voltage to and block a voltage from a gate electrode of a memory cell is provided. The E-type transistor includes a gate insulating film with a thickness in a range of 13 nm to 50 nm, a first current terminal, and a second current terminal. The E-type transistor includes a first source diffusion layer and a first drain diffusion layer having a first n-type impurity density and formed in a vicinity of the gate electrode; and a second source diffusion layer and a second drain diffusion layer having a second n-type impurity density higher than the first n-type impurity density. The second current terminal of the E-type transistor is electrically connected to a voltage source configured to provide a voltage equal to or larger than 15 V.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile