The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Oct. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yangdoo Kim, Seoul, KR;
Namgun Kim, Hwaseong-si, KR;
Yonghwan Kim, Hwaseong-si, KR;
Sangwuk Park, Hwaseong-si, KR;
Minkyu Suh, Yongin-si, KR;
Jungpyo Hong, Gwangmyeong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate having a cell array region and a peripheral region, lower electrodes disposed on the cell array region, at least one supporter layer contacting the lower electrodes, a dielectric layer covering the lower electrodes and the at least one supporter layer, an upper electrode covering the dielectric layer, an interlayer insulating layer covering an upper surface and a side surface of the upper electrode, a peripheral contact plug passing through the interlayer insulating layer on the peripheral region of the substrate, and a first oxide layer between the upper electrode and the peripheral contact plug. The upper electrode includes at least one protruding region protruding in a lateral direction from the cell array region toward the peripheral region. The first oxide layer is disposed between the at least one protrusion region and the peripheral contact plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile