The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Nov. 06, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Ryoko Suzuki, Tokyo, JP;
Keisuke Matsumoto, Tokyo, JP;
Naoki Nakamura, Tokyo, JP;
Ryosuke Miyagoshi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An optical semiconductor device of the present disclosure comprises: a ridge structure formed on a first-conductivity-type semiconductor substrate; a buried layer buried on both side surfaces of the ridge structure; a second-conductivity-type second cladding layer and a second-conductivity-type contact layer laminated on the top of the ridge structure and the surface of the buried layer; a stripe-shaped mesa structure formed of a mesa reaching from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate; a heat dissipation layer formed on the surface of the second-conductivity-type contact layer; a mesa protective film covering both side surfaces of the mesa structure and both end portions of the surface of the second-conductivity-type contact layer; and a second-conductivity-type-side electrode electrically connected to the second-conductivity-type contact layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile