The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Nov. 30, 2023
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/304 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01J 37/304 (2013.01); H01J 2237/24405 (2013.01); H01J 2237/24528 (2013.01); H01J 2237/24535 (2013.01); H01J 2237/31703 (2013.01);
Abstract
An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that Wis greater than W.
Quick Actions:
Jelinek, Moriz. (2026). Ion beam current measurement device and ion beam implantation system (U.S. Patent No. 12793937). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12793937
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile