The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2026

Filed:

May. 24, 2024
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Ayan Saikia, Bengaluru, IN;

Ashok Kumar Jyani, Bengaluru, IN;

Shivasubramaniyarajan V M, Bengaluru, IN;

Pradeep Kumar Anantula, Bengaluru, IN;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); H02M 3/07 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10W 90/00 (2026.01); H10W 90/24 (2026.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); H02M 3/07 (2013.01); G11C 16/0483 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10W 90/00 (2026.01); H10W 90/24 (2026.01);
Abstract

A charge pump with a programmable architecture generates a deeper negative voltage to reduce chip area requirements and lower current consumption at chip-level. A set of serially connected charge transfer switches are connected between an input node, that can be set at ground or other low voltage, and an output node providing the negative voltage. Stage capacitors each have one plate connected between a pair of the charge transfer switches and a second plate receiving one of a pair of non-overlapping clock signals having an amplitude of the charge pump supply level. The charge transfer switches receive control signals to be alternately on or off and, when off, the output of the charge transfer switch is shorted to its control gate. Different input voltage levels can be selected and used to pre-charge the control gate of the first of the charge transfer switches to provide different output nodes.


Find Patent Forward Citations

Quick Actions:

Saikia, Ayan. (2026). Generation of a deeper negative voltage using charge-pump to reduce chip area and current consumption (U.S. Patent No. 12793792). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12793792

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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