The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
May. 15, 2024
Canon Kabushiki Kaisha, Tokyo, JP;
Tatsuya Murao, Kanagawa, JP;
Yuki Kitazawa, Kanagawa, JP;
Yasushi Koyama, Kanagawa, JP;
Takahiro Yajima, Kanagawa, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A photoelectric conversion apparatus includes a semiconductor layer, an avalanche photodiode, an electrode film, and a wiring structure. The semiconductor layer has a first surface and a second surface. The avalanche photodiode is arranged in the semiconductor layer. The electrode film is arranged to contact the first surface. The wiring structure is arranged to contact the second surface. At least part of light from an outside enters the semiconductor layer via the electrode film. The electrode film includes a first electrode film and a second electrode film. The first electrode film is arranged to contact the first surface such that a Schottky barrier diode is formed in a contact portion with the semiconductor layer. The second electrode film contains a material different from the first electrode film and is arranged to overlap the first electrode film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile