The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Nov. 15, 2023
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 74/43 (2026.01); H10W 74/10 (2026.01); H10W 80/00 (2026.01); H10W 90/00 (2026.01); H10W 72/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 74/147 (2026.01); H10W 74/43 (2026.01); H10W 80/011 (2026.01); H10W 80/327 (2026.01); H10W 72/0198 (2026.01); H10W 72/07307 (2026.01); H10W 90/288 (2026.01); H10W 90/792 (2026.01);
Abstract
A three-dimensional integrated circuit includes a first integrated circuit having a first transistor and a first buried oxide layer; a second integrated circuit having a second transistor and a second buried oxide layer; a bond interface between an upper surface of the first integrated circuit and an upper surface of the second integrated circuit; a passivation layer coupled to the first buried oxide layer; and a mold wafer coupled to the second buried oxide layer.
Quick Actions:
Taddiken, Hans. (2026). 3d-ic for rf applications (U.S. Patent No. 12787881). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787881
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile