The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
May. 17, 2024
Rohm Co., Ltd., Kyoto, JP;
Katsuhiko Yoshihara, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a support member, semiconductor element, buffer layer and conductive member. The semiconductor element includes first and gate electrodes opposite from the side facing the support member in first direction. The semiconductor element is bonded to the support member. The buffer layer is electrically bonded to the first electrode. The conductive member is electrically bonded to the buffer layer. A first solid phase diffusion binding layer is between the first electrode and the buffer layer. The semiconductor element includes, on the same side as the gate electrode in first direction, a gate finger connected to the gate electrode. The gate finger includes a protrusion beyond the first electrode toward the buffer layer. The buffer layer includes a recess recessed from the side facing the semiconductor element in first direction. At least a part of the protrusion is accommodated in the recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile