Method for fabricating semiconductor devices using through-die laser reflow and backside thermal layer stack formation

Abstract

A semiconductor device and a method for forming the same are provided. The method includes: providing a substrate; providing a semiconductor die having a first die surface and a second die surface opposite to the first die surface; attaching the first die surface to the substrate via an interconnect structure comprising solder; and irradiating the second die surface with a laser beam, wherein the laser beam passes through the semiconductor die and reflows the solder of the interconnect structure. In the method, laser-assisted bonding can is used to reflow solder bumps, and thermal interface material can be formed after the laser-assisted bonding.