The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Sep. 12, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Joseph Aubuchon, San Jose, CA (US);

Kenneth S. Collins, San Jose, CA (US);

Hanhong Chen, Milpitas, CA (US);

Philip A. Kraus, San Jose, CA (US);

Michael Rice, Pleasanton, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/694 (2026.01); H10P 14/60 (2026.01);
U.S. Cl.
CPC ...
H10P 14/69433 (2026.01); H10P 14/6336 (2026.01); H10P 14/6682 (2026.01);
Abstract

Methods of depositing improved quality silicon nitride (SiN) films are disclosed. Exemplary methods include exposing a semiconductor substrate in a semiconductor processing chamber to a silicon-containing precursor, to a first plasma produced from a first gas mixture comprising helium (He) and nitrogen (N), the first gas mixture comprising a ratio of helium:nitrogen in a range of from 20:1 to 1000:1, and exposing the semiconductor substrate to a second plasma produced from a second gas mixture comprising helium (He), nitrogen (N), and ammonia (NH).


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Aubuchon, Joseph. (2026). Methods of forming silicon nitride films (U.S. Patent No. 12787669). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787669

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