The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
May. 22, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a magnetoresistive memory device includes: forming, sequentially, a magnetic tunnel junction (MTJ) structure and a metal layer on a substrate in first and second cell regions; performing a first oxidation process on the metal layer in the first and second cell regions to form a first metal oxide layer; performing an ion implantation process on the first metal oxide layer in the first cell region to form a second metal oxide layer while the first metal oxide layer is exposed in the second cell region; and patterning the MTJ structure, the first and second metal oxide layers to form a first memory element including a first MTJ structure and the second metal oxide layer in the first cell region, and to form a second memory element including a second MTJ structure and the first metal oxide layer in the second cell region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile