The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Dec. 08, 2022
Nuvoton Technology Corporation Japan, Kyoto, JP;
Toru Takayama, Toyama, JP;
Nuvoton Technology Corporation Japan, Kyoto, JP;
Abstract
A nitride-based semiconductor light-emitting element includes a semiconductor stack body that includes: an N-type first cladding layer; an N-side guide layer; an active layer that includes a well layer and a barrier layer; a P-side guide layer; and a P-type cladding layer. Band gap energy of the P-side guide layer monotonically increases with an increase in distance from the active layer. An average of the band gap energy of the P-side guide layer is greater than or equal to an average of band gap energy of the N-side guide layer. Band gap energy of the barrier layer is less than or equal to a smallest value of the band gap energy of the N-side guide layer and a smallest value of the band gap energy of the P-side guide layer. A thickness of the P-side guide layer is greater than a thickness of the N-side guide layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile