Semiconductor element and manufacturing method for semiconductor element

Abstract

A method of manufacturing a semiconductor element includes: providing a semiconductor stack including: a silicon substrate containing a first impurity of a first conductivity type that is one of p-type and n-type, at a first concentration, and a silicon semiconductor layer provided on the silicon substrate, the silicon semiconductor layer including: a first silicon semiconductor layer containing a second impurity of the first conductivity type at a second concentration that is lower than the first concentration, and a second silicon semiconductor layer containing a third impurity of a second conductivity type that is the other of p-type and n-type; and irradiating the silicon semiconductor layer with light having a predetermined peak wavelength in a presence of a forward current flowing through the silicon semiconductor layer such that the third impurity is diffused. The predetermined peak wavelength is longer than a wavelength corresponding to a magnitude of a bandgap of silicon.