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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12787434 B1

PDFFull Text
Date of Patent:
Nov. 03, 2026

Filed:

Apr. 28, 2023

Semiconductor device and display device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Koji Kusunoki, Isehara, JP;

Susumu Kawashima, Atsugi, JP;

Hideaki Shishido, Atsugi, JP;

Tomoaki Atsumi, Hadano, JP;

Motoharu Saito, Atsugi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Attorneys:

Eric J. Robinson

Robinson Intellectual Property Law Office, P.C.

Primary Examiner:

Jeff W Natalini

Assistant Examiner:

Jacob Raul Marin

Int. Cl.
CPC ...
H10D 86/60 (2025.01); G09G 3/3233 (2016.01); H10D 86/40 (2025.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); G09G 3/3233 (2013.01); H10D 86/431 (2025.01); G09G 2300/0842 (2013.01); G09G 2310/08 (2013.01);
Abstract

A semiconductor device including a first transistor, a second transistor, and an insulating layer is provided. The first transistor includes a first semiconductor layer and a first conductive layer. The second transistor includes a second semiconductor layer and a second conductive layer. The insulating layer includes a first side surface over the first conductive layer and a second side surface over the second conductive layer. A gate insulating layer includes a portion facing the first side surface with the first semiconductor layer therebetween and a portion facing the second side surface with the second semiconductor layer therebetween. A gate electrode includes a portion facing the first side surface with the gate insulating layer and the first semiconductor layer therebetween and a portion facing the second side surface with the gate insulating layer and the second semiconductor layer therebetween. The first semiconductor layer is electrically connected to the second semiconductor layer.

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Kusunoki, Koji. (2026). Semiconductor device and display device (U.S. Patent No. 12787434). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787434

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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