The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Dec. 21, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungmin Kim, Seongnam-si, KR;

Yeon Sook Kim, Hwaseong-si, KR;

Yoon-Hee Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/088 (2006.01); H10D 62/17 (2025.01); H10D 84/83 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 62/371 (2025.01); H10D 84/83 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract

A semiconductor substrate includes a base substrate, a first epitaxial layer having a first conductivity type on the base substrate, a second epitaxial layer having the first conductivity type on the first epitaxial layer, a first well region having a second conductivity type different from the first conductivity type, in the first epitaxial layer and the second epitaxial layer, and a second well region which is spaced apart from the first well region and has the second conductivity type, in the first epitaxial layer and the second epitaxial layer, wherein a doping concentration of the first epitaxial layer is greater than a doping concentration of the second epitaxial layer, and a depth of each of the first well region and the second well region is greater than a thickness of the second epitaxial layer.


Find Patent Forward Citations

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Kim, Sungmin. (2026). Semiconductor substrate, semiconductor device including the same, and method for fabricating the same (U.S. Patent No. 12787390). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787390

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