The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Feb. 18, 2022
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroki Nemoto, Fuchu, JP;

Yusuke Kobayashi, Yokohama, JP;

Tomoaki Inokuchi, Yokohama, JP;

Hiro Gangi, Ota, JP;

Tatsuo Shimizu, Shinagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H10D 30/0297 (2025.01); H10D 64/112 (2025.01); H10D 64/117 (2025.01); H10D 64/513 (2025.01);
Abstract

A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a fourth semiconductor region of a second conductivity type, a third electrode connected to the second electrode and the fourth semiconductor region, a first insulating region, a gate electrode, and a second insulating region.


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Nemoto, Hiroki. (2026). Mos type semiconductor device having field plate electrode and method for manufacturing the same (U.S. Patent No. 12787354). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787354

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