The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Oct. 27, 2023
International Business Machines Corporation, Armonk, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the present disclosure are directed to a side-gated fin field effect transistor configured as a scanning single electron transistor. In a non-limiting embodiment, a scanning single electron transistor includes a fin formed over a substrate. A source gate is formed over a first portion of the substrate that extends over a sidewall of the fin. A drain gate is formed over a second portion of the substrate that extends over the sidewall of the fin. A plunger gate is formed over a third portion of the substrate that extends over the sidewall of the fin. The plunger gate is positioned between the source gate and the drain gate. The plunger gate is etched back from a topmost surface of the fin such that a quantum dot formed in the fin is not screened by metallic materials in the plunger gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile