The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Jul. 20, 2023
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventor:

Abderrezak Marzaki, Aix en Provence, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 8/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 8/605 (2025.01); H10D 8/051 (2025.01); H10D 62/106 (2025.01);
Abstract

A semiconductor device includes a Schottky diode on a substrate. The Schottky diode includes a layer of polysilicon disposed on a dielectric layer within the substrate that is configured to electrically insulate the layer of polysilicon from the substrate. The layer of polysilicon includes an N-type doped first cathode region adjacent to an undoped second anode region. A first metal contact is disposed on a surface of the N-type doped first cathode region and a second metal contact is disposed on a surface of the undoped second anode region. The first metal contact and second metal contact are electrically insulated from each other by an insulating layer on the layer of polysilicon.


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Marzaki, Abderrezak. (2026). Method for manufacturing a schottky diode and corresponding integrated circuit (U.S. Patent No. 12787321). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787321

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