logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12787301 B1

PDFFull Text
Date of Patent:
Nov. 03, 2026

Filed:

Jul. 07, 2023

Metal chalcogenide film, memory element including same, and method for manufacturing phase-change heterolayer

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Uif (University Industry Foundation), Yonsei University, Seoul, KR;

Inventors:

Wooyoung Yang, Suwon-si, KR;

Hyungjun Kim, Seoul, KR;

Hajun Sung, Suwon-si, KR;

Kiyeon Yang, Suwon-si, KR;

Changseung Lee, Suwon-si, KR;

Changyup Park, Suwon-si, KR;

Seung-Min Chung, Seoul, KR;

Sangyoon Lee, Seoul, KR;

Inkyu Sohn, Seoul, KR;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

UIF (University Industry Foundation), Yonsei University, Seoul, KR;

Attorney:

HARNESS, DICKEY & PIERCE, P.L.C.

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H10B 63/10 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/10 (2023.02); H10B 63/20 (2023.02); H10N 70/023 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/828 (2023.02); H10N 70/882 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02);
Abstract

A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.

Find Patent Forward Citations

Quick Actions:

Yang, Wooyoung. (2026). Metal chalcogenide film, memory element including same, and method for manufacturing phase-change heterolayer (U.S. Patent No. 12787301). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787301

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…