The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Dec. 12, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tomonari Shioda, Nagoya, JP;

Saori Matsushita, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/30 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/30 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor storage element according to the present embodiment includes a laminated body, a semiconductor layer, a first insulator, a second insulator, a third insulator, and a fourth insulator. In the laminated body, the insulating layers and conductive layers are alternately laminated in a first direction. The third insulator is disposed between the laminated body and the second insulator. A first part of the fourth insulator is disposed between each of the conductive layers and the third insulator. The average concentration of deuterium in the first part is higher than the average concentration of deuterium in the third insulator. The ratio of deuterium concentration to light hydrogen concentration in the first part is smaller than the ratio of deuterium concentration to light hydrogen concentration in the third insulator.


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Shioda, Tomonari. (2026). Semiconductor storage element and manufacturing method thereof (U.S. Patent No. 12787292). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787292

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