The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Dec. 22, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Chang Youn Hwang, Gyeonggi-do, KR;

Sang Soo Park, Gyeonggi-do, KR;

Dong Goo Choi, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H10B 12/02 (2023.02); H10B 12/315 (2023.02);
Abstract

A semiconductor device includes: a plurality of first contacts spaced apart from each other by a predetermined distance in a semiconductor substrate; a plurality of conductive structures formed over the first contacts, extending in a first direction and spaced apart in a second direction perpendicular to the first direction, each of which partially overlaps with each of the first contacts, and having a top surface of a portion that overlaps with each of the first contacts at a lower level than a top surface of a portion that does not overlap with each of the first contacts; a plurality of second contacts disposed between neighboring conductive structures; and a plurality of spacer structures disposed between the conductive structures and the second contacts.


Find Patent Forward Citations

Quick Actions:

Hwang, Chang. (2026). Semiconductor device and method for fabricating the same (U.S. Patent No. 12787261). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787261

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