The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Nov. 23, 2022
SK Hynix Inc., Gyeonggi-do, KR;
Dong Soo Kim, Gyeonggi-do, KR;
Mun Gi Sim, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
Embodiments of the present invention provides a semiconductor device with improved electrical characteristics and a method of fabricating the same. A semiconductor device according to an embodiment of the present invention comprises: a substrate including a trench; a gate dielectric layer formed along a sidewall surface and a bottom surface of the trench; a lower gate electrode filling a lower portion of the trench over the gate dielectric layer and formed of a first metal nitride, the first metal nitride having a first grain size; an upper gate electrode partially filling the trench over the lower gate electrode, including a low work function control element, and formed of a second metal nitride, the second metal nitride having a second grain size bigger than the first grain size; and a capping layer gap-filling the remainder of the trench over the upper gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile