The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Nov. 07, 2023
Applicant:

Seoul National University R&db Foundation, Seoul, KR;

Inventor:

Cheol Seong Hwang, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/05 (2023.02); H10B 12/03 (2023.02); H10B 12/30 (2023.02);
Abstract

The present disclosure discloses a manufacturing method of a memory device including forming a structure including an epitaxial material plug extending vertically on a substrate, an epitaxial material layer extending horizontally from a side surface of the epitaxial material plug, and a gate insulating material layer formed at least on a surface of the epitaxial material layer, defining a transistor including a word line by forming the word line in contact with the gate insulating material layer in a transistor formation region around the epitaxial material plug in the structure, removing the epitaxial material layer and the gate insulating material layer from a capacitor formation region adjacent to the transistor formation region of the structure, and forming a capacitor connected to one end of the epitaxial material layer corresponding to a channel of the transistor.


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Hwang, Cheol. (2026). Memory device and manufacturing method thereof (U.S. Patent No. 12787250). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12787250

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