The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Dec. 09, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kibum Kim, Suwon-si, KR;
Seonkyeong Kim, Suwon-si, KR;
Yongeun Cho, Suwon-si, KR;
Eunhee Choi, Suwon-si, KR;
Hayoung Kim, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a bias voltage generation circuit generating a plurality of bias voltages. The bias voltage generation circuit includes a plurality of transistors connected in series between a first power node supplying a first power voltage and a reference node supplying a reference voltage, lower than the first power voltage, a plurality of capacitors connected to some transistors among the plurality of transistors, wherein each of the plurality of capacitors is connected in parallel with a corresponding transistor of the some transistors, and a turn-on circuit configured to supply a turn-on voltage to a gate of a first transistor among the plurality of transistors. Each of the turn-on circuit and the first transistor is directly connected to the first power node. Each of the plurality of transistors has a gate and a drain, electrically connected to each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile