The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Sep. 12, 2023
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventors:
Aaron Cook, Windham, NH (US);
David J. Perreault, Cambridge, MA (US);
John R. Hoversten, Arlington, MA (US);
Assignee:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/00 (2006.01); H02M 3/07 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H02M 3/07 (2013.01); H03K 2217/0081 (2013.01);
Abstract
Described is a power transmission gate which includes a charge pump, an NMOS transistor, and a gate driver circuit configured to power (or bias or 'drive') a gate of the NMOS transistor. With this arrangement, a power transmission gate capable of achieving substantially the same resistance provided by prior art power transmission gates while having a footprint of just over one NMOS size unit is provided.
Quick Actions:
Cook, Aaron. (2026). Power transmission gate using charge pump (U.S. Patent No. 12785677). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12785677
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile