The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2026

Filed:

Dec. 04, 2024
Applicant:

Cxmt Corporation, Hefei City, CN;

Inventors:

Weibing Shang, Hefei City, CN;

Xiangyun Han, Hefei City, CN;

Yifei Luo, Hefei City, CN;

Xindi Wang, Hefei City, CN;

Hangtian BA, Hefei City, CN;

Assignee:

CXMT Corporation, Hefei City, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12005 (2013.01); G11C 2029/1204 (2013.01);
Abstract

The present disclosure provides a memory. In the memory, each bit line in a non-edge memory array tile is coupled to a corresponding stress test power supply, and a stress test power supply corresponding to a first bit line is different from a stress test power supply corresponding to an adjacent second bit line. A first bit line in an edge memory array tile is coupled to a corresponding stress test power supply, and a stress test power supply corresponding to an odd-numbered first bit line is different from a stress test power supply corresponding to an even-numbered first bit line.


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Shang, Weibing. (2026). Memory (U.S. Patent No. 12784857). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12784857

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