Advanced dummy word line ramp down after program verify for memory devices

Abstract

The present disclosure provides for pre-charging a memory device. The memory device comprises memory cells connected to data word lines and in a plurality of channels. The word lines comprise first data word lines and second data word lines separated by dummy word lines. Examples include performing a program-verify operation to verify programming of one or more memory cells connected to a selected data word line of the first data word lines by applying an overdrive voltage to the second data word lines and the dummy word lines. Examples include, during the program-verify operation, pre-charging a channel of memory cells connected to unselected data word line of the first data word lines by applying a pre-charge voltage to a source line, and ramping down the overdrive voltage applied to the dummy word lines prior to ramping down the overdrive voltage.